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| BUK554-60H Datasheet, PDF (2/7 Pages) NXP Semiconductors – PowerMOS transistor Logic level FET | |||
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Philips Semiconductors
PowerMOS transistor
Logic level FET
Product specification
BUK554-60H
STATIC CHARACTERISTICS
Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS
VGS(TO)
IDSS
IDSS
IGSS
RDS(ON)
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
VGS = 0 V; ID = 0.25 mA
VDS = VGS; ID = 1 mA
VDS = 60 V; VGS = 0 V; Tj = 25 ËC
VDS = 60 V; VGS = 0 V; Tj =125 ËC
VGS = ±15 V; VDS = 0 V
VGS = 5 V; ID = 20 A
DYNAMIC CHARACTERISTICS
Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
gfs
Forward transconductance
Ciss
Input capacitance
Coss
Output capacitance
Crss
Feedback capacitance
td on
Turn-on delay time
tr
Turn-on rise time
td off
Turn-off delay time
tf
Turn-off fall time
Ld
Internal drain inductance
Ld
Internal drain inductance
Ls
Internal source inductance
CONDITIONS
VDS = 25 V; ID = 20 A
VGS = 0 V; VDS = 25 V; f = 1 MHz
VDD = 30 V; ID = 3 A;
VGS = 5 V; RGS = 50 â¦;
Rgen = 50 â¦
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IDR
Continuous reverse drain
-
current
IDRM
Pulsed reverse drain current -
VSD
Diode forward voltage
IF = 39 A ; VGS = 0 V
trr
Reverse recovery time
IF = 39 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge
VGS = 0 V; VR = 30 V
AVALANCHE LIMITING VALUE
Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
WDSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
ID = 39 A ; VDD ⤠25 V ;
VGS = 5 V ; RGS = 50 â¦
MIN. TYP. MAX. UNIT
60
-
-
V
1.0 1.5 2.0 V
-
1
10 µA
-
0.1 1.0 mA
-
10 100 nA
-
35 42 mâ¦
MIN.
10
-
-
-
-
-
-
-
-
TYP.
18
1100
420
160
25
110
150
100
3.5
MAX.
-
1750
600
275
40
150
220
145
-
UNIT
S
pF
pF
pF
ns
ns
ns
ns
nH
-
4.5
-
nH
-
7.5
-
nH
MIN. TYP. MAX. UNIT
-
-
39
A
-
- 156 A
- 0.95 2.0 V
-
60
-
ns
- 0.30 -
µC
MIN. TYP. MAX. UNIT
-
-
90 mJ
August 1996
2
Rev 1.000
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