TDA6500 Datasheet, PDF (18/37 Pages) NXP Semiconductors – 5 V mixer/oscillator and synthesizer for PAL and NTSC standards

Philips Semiconductors
TDA6500; TDA6501
5 V mixer/oscillator and synthesizer for PAL and NTSC standards
Table 20: Mixer …continued
V_CC = 5 V; T_amb = 25 °C; values are given for an IF amplifier with 500 Ω load (measured as shown in Figure 7 for the PAL
standard); unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
G_v
voltage gain
f_RF = 157 MHz; see Figure 13
35
38
41
dB
f_RF = 443 MHz; see Figure 13
35
38
41
dB
NF
V_o(mod)
noise figure (not corrected
for image)
output voltage causing
0.3 % cross modulation in
channel
f_RF = 157 MHz; see Figure 14
f_RF = 443 MHz; see Figure 14
f_RF = 157 MHz; see Figure 15
f_RF = 443 MHz; see Figure 15
-
6
8.0
-
6
8.0
108 111 -
108 111 -
dB
dB
dBµV
dBµV
V_o(FM)
output voltage causing
1.1 kHz incidental FM
f_RF = 157 MHz
f_RF = 443 MHz
[2] _{108 111 -}
[2] _{108 111}
V_{f(N+5)−1} (N + 5) − 1 MHz pulling
f_RFwanted = 443 MHz; f_osc = 481.9 MHz; ^[5] 72
80
-
f_RFunwanted = 482 MHz
Z_i
input impedance (R_S + jL_Sω) R_S at f_RF = 157 MHz; see Figure 5
-
25
-
R_S at f_RF = 443 MHz; see Figure 5
-
25
-
dBµV
dBµV
dBµV
Ω
Ω
L_S at f_RF = 157 MHz; see Figure 5
-
13
-
nH
L_S at f_RF = 443 MHz; see Figure 5
-
13
-
nH
V_i
input level without lock-out see Figure 16
[4] _-
-
120 dBµV
High band mixer in high band mode (P0 = 0 and P1 = 0); including IF amplifier
f_RF
RF frequency
picture carrier
[1] _{455.25 -}
855.25 MHz
G_v
voltage gain
f_RF = 443 MHz; see Figure 13
35
38
41
dB
f_RF = 863.25 MHz; see Figure 13
35
38
41
dB
NF
V_o(mod)
noise figure (not corrected
for image)
output voltage causing
0.3 % cross modulation in
channel
f_RF = 443 MHz; see Figure 14
f_RF = 863.25 MHz; see Figure 14
f_RF = 443 MHz; see Figure 15
f_RF = 863.25 MHz; see Figure 15
-
6.0 8.0
-
7.0 9.0
108 111 -
108 111 -
dB
dB
dBµV
dBµV
V_o(FM)
output voltage causing
1.1 kHz incidental FM
f_RF = 443 MHz
f_RF = 863.25 MHz
[2] _{108 111 -}
[2] _{108 111 -}
V_{f(N+5)−1} (N + 5) − 1 MHz pulling
f_RFwanted = 863.25 MHz;
f_osc = 902.15 MHz;
f_RFunwanted = 902.25 MHz
[5] ₇₂
80
-
Z_i
input impedance (R_S + jL_Sω) R_S at f_RF = 443 MHz; see Figure 5
-
25
-
R_S at f_RF = 863.25 MHz; see Figure 5
-
23
-
dBµV
dBµV
dBµV
Ω
Ω
L_S at f_RF = 443 MHz; see Figure 5
-
13
-
nH
L_S at f_RF = 863.25 MHz; see Figure 5
-
13
-
nH
V_i
input level without lock-out see Figure 16
[4] _-
-
120 dBµV
[1] The RF frequency range is defined by the oscillator frequency range and the Intermediate Frequency (IF).
[2] This is the level of the RF unwanted signal, 50 % amplitude modulated with 1 kHz, that causes a 1.1 kHz FM modulation of the local
oscillator and thus of the wanted signal; V_wanted = 100 dBµV; f_unwanted = f_wanted + 5.5 MHz. The FM modulation is measured at the
oscillator output with a peeking coil using a modulation analyzer with a peak-to-peak detector and a post detection filter of
300 Hz up to 3 kHz.
[3] Channel SO2 beat is the interfering product of f_RFpix, f_IF and f_osc of channel SO2; f_beat = 37.35 MHz. The possible mechanisms are:
f_osc − 2 × f_IF or 2 × f_RFpix − f_osc. For the measurement V_o(IFOUT) = V_RFpix = 115 dBµV.
9397 750 15057
Product data sheet
Rev. 02 — 14 June 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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