GTL2008 Datasheet, PDF (11/20 Pages) NXP Semiconductors – 12-bit GTL to LVTTL translator with power good control and high-impedance LVTTL and GTL outputs

Philips Semiconductors
GTL2008; GTL2107
GTL translator with power good control and high-impedance outputs
Table 13. Dynamic characteristics …continued
V_CC = 3.3 V ± 0.3 V
Symbol Parameter
Conditions
V_ref = 0.76 V; V_TT = 1.2 V
t_PLH
LOW-to-HIGH propagation delay
nA to nBI; see Figure 4
9BI to 9AO; see Figure 5
nBI to nA or nAO (open-drain outputs);
see Figure 14
9BI to 10BOn
11A to 11BO; see Figure 10
11BI to 11A; see Figure 9
11BI to 11BO
5BI to 7BO1 or 6BI to 7BO2;
see Figure 7
t_PHL
HIGH-to-LOW propagation delay nA to nBI; see Figure 4
9BI to 9AO; see Figure 5
nBI to nA or nAO (open-drain outputs);
see Figure 14
9BI to 10BOn
11A to 11BO; see Figure 10
11BI to 11A; see Figure 9
11BI to 11BO
5BI to 7BO1 or 6BI to 7BO2;
see Figure 7
t_PLZ
LOW to OFF-state propagation EN1 to nAO or EN2 to nAO;
delay
see Figure 8
EN1 to 5A (I/O) or EN2 to 6A (I/O);
see Figure 8
t_PZL
OFF-state to LOW
propagation delay
EN1 to nAO or EN2 to nAO;
see Figure 8
EN1 to 5A (I/O) or EN2 to 6A (I/O);
see Figure 8
t_PHZ
HIGH to OFF-state
propagation delay
EN2 to 9AO; see Figure 11
t_PZH
OFF-state to HIGH
propagation delay
EN2 to 9AO; see Figure 11
Min
1
2
2
2
1
2
2
4
2
2
2
2
1
2
[2] ₂
100
1
1
2
2
2
2
Typ^[1] Max Unit
4
8
ns
5.5 10
ns
13
18
ns
6
11
ns
4
8
ns
7.5 11
ns
8
13
ns
7
12
ns
5.5 10
ns
5.5 10
ns
4
10
ns
6
11
ns
5.5 10
ns
8.5 13
ns
14
21
ns
205 350 ns
3
10
ns
3
7
ns
7
10
ns
7
10
ns
5
10
ns
4
10
ns
[1] All typical values are at V_CC = 3.3 V and T_amb = 25 °C.
[2] Includes ~7.6 ns RC rise time of test load pull-up on 11A, 1.5 kΩ pull-up and 21 pF load on 11A has about 23 ns RC rise time.
GTL2008_GTL2107_2
Product data sheet
Rev. 02 — 26 September 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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