74HC283N Datasheet, PDF (11/20 Pages) NXP Semiconductors – 4-bit binary full adder with fast carry

Philips Semiconductors
74HC283
4-bit binary full adder with fast carry
Table 8: Dynamic characteristics …continued
GND = 0 V; t_r = t_f = 6 ns; C_L = 50 pF; see Figure 7.
Symbol Parameter
Conditions
T_amb = −40 °C to +125 °C
t_PHL, t_PLH propagation delay CIN to S1
propagation delay CIN to S2
see Figure 6
V_CC = 2.0 V
V_CC = 4.5 V
V_CC = 6.0 V
see Figure 6
propagation delay CIN to S3
V_CC = 2.0 V
V_CC = 4.5 V
V_CC = 6.0 V
see Figure 6
propagation delay CIN to S4
V_CC = 2.0 V
V_CC = 4.5 V
V_CC = 6.0 V
see Figure 6
propagation delay An or Bn to Sn
V_CC = 2.0 V
V_CC = 4.5 V
V_CC = 6.0 V
see Figure 6
propagation delay CIN to COUT
V_CC = 2.0 V
V_CC = 4.5 V
V_CC = 6.0 V
see Figure 6
propagation delay An or Bn to
COUT
t_THL, t_TLH output transition time
V_CC = 2.0 V
V_CC = 4.5 V
V_CC = 6.0 V
see Figure 6
V_CC = 2.0 V
V_CC = 4.5 V
V_CC = 6.0 V
see Figure 6
V_CC = 2.0 V
V_CC = 4.5 V
V_CC = 6.0 V
[1] C_PD is used to determine the dynamic power dissipation (P_D in µW).
P_D = C_PD × V_CC2 × f_i × N + ∑(C_L × V_CC2 × f_o) where:
f_i = input frequency in MHz;
f_o = output frequency in MHz;
C_L = output load capacitance in pF;
V_CC = supply voltage in V;
N = number of inputs switching;
∑(C_L × V_CC2 × f_o) sum of outputs.
9397 750 13811
Product data sheet
Rev. 03 — 11 November 2004
Min
Typ
Max
Unit
-
-
240
ns
-
-
48
ns
-
-
41
ns
-
-
270
ns
-
-
54
ns
-
-
46
ns
-
-
295
ns
-
-
59
ns
-
-
50
ns
-
-
345
ns
-
-
69
ns
-
-
59
ns
-
-
315
ns
-
-
63
ns
-
-
54
ns
-
-
295
ns
-
-
59
ns
-
-
50
ns
-
-
295
ns
-
-
59
ns
-
-
50
ns
-
-
110
ns
-
-
22
ns
-
-
19
ns
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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