PSMN4R0-25YLC Datasheet, PDF (1/15 Pages) NXP Semiconductors – N-channel 25 V 4.5 mΩ logic level MOSFET in LFPAK

PSMN4R0-25YLC
N-channel 25 V 4.5 mΩ logic level MOSFET in LFPAK
Rev. 01 — 2 December 2010
Product data sheet
1. Product profile
1.1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
 High reliability Power SO8 package,
qualified to 175°C
 Low parasitic inductance and
resistance
 Optimised for 4.5V Gate drive utilising
Superjunction technology
 Ultra low QG, QGD & QOSS for high
system efficiencies at low and high
loads
1.3 Applications
 DC-to-DC converters
 Load switching
 Power OR-ing
 Server power supplies
 Sync rectifier
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
V_DS
drain-source
T_j ≥ 25 °C; T_j ≤ 175 °C
voltage
I_D
drain current
V_GS = 10 V; T_mb = 25 °C;
see Figure 1
P_tot
total power
T_mb = 25 °C; see Figure 2
dissipation
T_j
junction
temperature
Static characteristics
R_DSon
drain-source
on-state
resistance
V_GS = 4.5 V; I_D = 20 A;
T_j = 25 °C; see Figure 12
V_GS = 10 V; I_D = 20 A;
T_j = 25 °C; see Figure 12
Min Typ Max Unit
-
-
25 V
-
-
84 A
-
-
61 W
-55 -
175 °C
-
4.5 5.8 mΩ
-
3.5 4.5 mΩ