PJ09N03D Datasheet, PDF (4/4 Pages) Pan Jit International Inc. – 25V N-Channel Enhancement Mode MOSFET

PJ09N03D
Vgs
Qg
Vgs(th)
Qsw
Qg(th)
Qgs
Qgd
Qg
Fig.7 - Gate Charge Waveform
1.3
ID=250uA
1.2
1.1
1
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
T_J - Junction Temperature (^oC)
Fig.9 - Threshold Voltage vs Temperature
100
VGS=0V
10
TJ=125^OC
1
TJ=25^OC
TJ=-55^OC
10
VDS=15V
ID=15A
8
6
4
2
0
0 5 10 15 20 25 30 35 40
Q_g - Gate Charge (nC)
Fig.8 - Gate Charge
33
ID=250uA
32
31
30
29
28
-50 -25 0
25 50 75 100 125 150
T_J - Junction Temperature (^oC)
Fig.10 - Breakdown Voltage vs Junction Temperature
0.1
0.2 0.4 0.6 0.8
1
1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Fig.11 - Source-Drain Diode Forward Voltage
LEGAL STATEMENT
Copyright PanJit International, Inc 2006
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
STAD-JUN.19.2006
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