PJ09N03D Datasheet, PDF (3/4 Pages) Pan Jit International Inc. – 25V N-Channel Enhancement Mode MOSFET

PJ09N03D
Typical Characteristics Curves (T_A=25^OC,unless otherwise noted)
80
VGS= 4.5V, 5.0V, 6.0V, 10.0V
60
4.0V
40
3.5V
20
3.0V
2.5V
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Fig. 1_F-T_IY_GP_.1IC_-AL_OF_uO_tpR_uW_tAR_CD_hC_aH_raA_cR_teA_rC_isT_tE_icRISTIC
30
25
20
VGS=4.5V
15
10
VGS=10V
5
0
0
20
40
60
80
I_D - Drain Current (A)
FIG.3- On Resistance vs Drain Current
1.6
VGS=10V
ID=30A
1.4
1.2
1
0.8
-50 -25 0 25 50 75 100 125 150
T_J - Junction Temperature (^oC)
FIG.5- On Resistance vs Junction Temperature
STAD-JUN.19.2006
60
VDS=10V
50
40
30
20
TJ=25^OC
10
TJ=125^OC
TJ=-55^OC
0
1.5
2
2.5
3
3.5
4
4.5
V_GS - Gate-to-Source Voltage (V)
FIG.2- Transfer Characteristic
50
I_D =30A
40
30
20
TJ=125^OC
10
TJ=25^OC
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
FIG.4- On Resistance vs Gate to Source Voltage
3000
2500
Cis s
VGS=0V
f=1MHZ
2000
1500
1000
Cos s
500
Cr s s
0
0
5
10
15
20
25
V_DS - Drain-to-Source Voltage (V)
FIG.6- Capacitance
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