PJ09N03D Datasheet, PDF (2/4 Pages) Pan Jit International Inc. – 25V N-Channel Enhancement Mode MOSFET

PJ09N03D
ELECTRICAL CHARACTERISTICS
Static
Parameter
S ym b o l
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
Dynamic
BV
DSS
V _GS(th)
R _{D S (o n)}
R _{D S (o n)}
I_{D S S}
I_{GS S}
g _fS
To ta l Ga te C ha r g e
Gate-Source Charge
Gate-Drain Charge
Turn-On D e la y Ti me
Turn-On Ri s e Ti me
Turn-Off D e la y Ti me
Turn-Off F a ll Ti me
Inp ut C a p a ci ta nce
Output Capacitance
Re ve rs e Tra ns fe r C a p a c i ta nc e
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
Q_g
Q_gs
Q_gd
T_d(on)
t_rr
t_d(off)
t_f
C _iss
C _oss
C _rss
I_s
V _SD
Te s t C o nd i ti o n
V =0V, I =250uA
GS
D
V _DS=V _GS, I_D=2 5 0 uA
V_GS=4.5V, I_D=30A
V_GS=10V, I_D=30A
V_DS=25V, V_GS=0V
V _GS=+20V, V _DS=0V
V _DS=1 0 V, I_D=1 5 A
V _DS=1 5 V,I_D=1 5 A ,V _GS=5 V
V _DS=1 5 V, I_D=1 5 A
V _GS=10V
V_DD=15V , R_L=15Ω
I_D=1A , V_GEN=10V
R_G=3.6Ω
V _DS=15V, V _GS=0V
f=1.0MH_Z
-
I_S=3 0 A , V _GS=0 V
Mi n.
Typ .
M a x.
Uni ts
25
-
-
V
1
-
3
V
-
12.5
16.0
mΩ
-
6.5
9.0
-
-
1
uA
-
-
+100
nA
30
-
-
S
-
22.1
-
-
39.0
-
nC
-
6.0
-
-
7.6
-
-
13.0
14.6
-
10.4
12.4
ns
-
41.2
48.6
-
13.4
15.8
-
2100
-
-
450
-
pF
-
300
-
-
-
50
A
-
0.91
1.2
V
Switching
VDD
Test Circuit
VIN
RL
Gate Charge
VDD
Test Circuit
VGS
RL
VOUT
RG
1mA
RG
STAD-JUN.19.2006
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