PJ06N03D Datasheet, PDF (4/4 Pages) Pan Jit International Inc. – 25V N-Channel Enhancement Mode MOSFET

PJ06N03D
Vgs
Qg
Vgs(th)
Qsw
Qg(th)
Qgs
Qgd
Qg
Fig.7 - Gate Charge Waveform
10
VDS=15V
ID=15A
8
6
4
2
0
0
20
40
60
80
Q_g - Gate Charge (nC)
Fig.8 - Gate Charge
1.3
ID=250uA
1.2
1.1
1
0.9
0.8
0.7
0.6
-50
-25 0 25 50 75 100 125 150
T_J - Junction Tem perature (^oC)
Fig.9 - Threshold Voltage vs Temperature
32
ID=250uA
31
30
29
28
27
-50
-25 0 25 50 75 100 125 150
T_J - Junction Temperature (^oC)
Fig.10 - Breakdown Voltage vs Junction Temperature
100
VGS=0V
10
TJ=125^OC
1
TJ=25^OC
0.1
0
TJ=-55^OC
0.2 0.4 0.6 0.8 1 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Fig.11 - Source-Drain Diode Forward Voltage
LEGAL STATEMENT
Copyright PanJit International, Inc 2006
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
STAD-JUN.19.2006
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