PJ06N03D Datasheet, PDF (3/4 Pages) Pan Jit International Inc. – 25V N-Channel Enhancement Mode MOSFET

PJ06N03D
Typical Characteristics Curves (T_A=25^OC,unless otherwise noted)
80
VGS=4.0V, 4.5V, 5.0V, 6.0V, 10.0V
60
3.5V
40
3.0V
20
2.5V
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Fig. 1_F-T_IY_GP_.1IC_-AL_OF_uO_tpR_uW_tAR_CD_hC_aH_raA_cR_teA_rC_isT_tE_icRISTIC
80
VDS=10V
60
40
TJ=25^OC
20
TJ=125^OC
TJ=-55^OC
0
1 1.5 2 2.5 3 3.5 4 4.5
V_GS - Gate-to-Source Voltage (V)
FIG.2- Transfer Characteristic
15
12.5
10
VGS=4.5V
7.5
VGS=10V
5
2.5
0
0 10 20 30 40 50 60 70 80 90
I_D - Drain Current (A)
FIG.3- On Resistance vs Drain Current
1.5
VGS=10V
1.4 _ID=30A
1.3
1.2
1.1
1
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 150
T_J - Junction Tem perature (^oC)
FIG.5- On Resistance vs Junction Temperature
STAD-JUN.19.2006
30
ID=30A
25
20
15
TJ=125^OC
10
5
TJ=25^OC
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
FIG.4- On Resistance vs Gate to Source Voltage
5000
Ciss
4000
VGS=0V
f=1MHZ
3000
2000
Coss
1000
Crss
0
0
5
10
15
20
25
V_DS - Drain-to-Source Voltage (V)
FIG.6- Capacitance
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