PJ06N03D Datasheet, PDF (1/4 Pages) Pan Jit International Inc. – 25V N-Channel Enhancement Mode MOSFET

PJ06N03D
25V N-Channel Enhancement Mode MOSFET
FEATURES
• R_DS(ON), V_GS@10V,I_DS@30A=6mΩ
• R_DS(ON), V_GS@4.5V,I_DS@30A=9mΩ
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for DC/DC Converters and Motor Drivers
• Fully Characterized Avalanche Voltage and Current
• Pb free product : 99% Sn above can meet RoHS environment
substance directive request
MECHANICAL DATA
• Case: TO-252 Molded Plastic
• Terminals : Solderable per MIL-STD-750D,Method 1036.3
• Marking : 06N03D
TO-252
Drain
Gate
Source
Maximum RATINGS and Thermal Characteristics (T_A=25^OC unless otherwise noted )
Drain-Source Voltage
PA RA ME TE R
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ¹⁾
Maximum Power Dissipation
Op e r a ti ng J unc ti o n a nd S to r a g e Te m p e r a tur e Ra ng e
Avalanche Energy with Single Pulse
ID=40A, VDD=25V, L=0.5mH
Junction-to-Case Thermal Resistance
T_A= 2 5 ^OC
T_A= 7 5 ^OC
Junction-to Ambient Thermal Resistance(PCB mounted)²
S ym b o l
V _DS
V _GS
I_D
I_{D M}
P_D
T_J,T_STG
E _AS
R_θJC
R_θJA
Limit
25
+20
60
320
70
42
-55 to + 150
400
1.8
50
Uni ts
V
V
A
A
W
O_C
mJ
O_{C /W}
O_{C /W}
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 10 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-JUN.19.2006
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