PJ04N03D Datasheet, PDF (4/5 Pages) Pan Jit International Inc. – 25V N-Channel Enhancement Mode Field Effect Transistor

PJ04N03D
Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)
10
V_DS =15 V
8
I_D =30A
6
4
2
0
0
10 20 30 40 50 60
Q_g - Gate Charge (nC)
Fig. 7 Gate Charge Waveform
1.3
I_D = 250µA
1.2
1.1
1
0.9
0.8
-50 -25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (oC)
Fig.9 Breakdown Voltage vs Junction Temperature
100
V_GS = 0V
10
T_J = 125^oC
1
25^oC
-55^oC
0.1
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Fig.8 Source-Drain Diode Forward Voltage
1.2
I_D =250µA
1.1
1
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150 175
T_J - Junction Temperature (^oC)
Fig.10 Threshold Voltage vs Junction Temperature
December 10,2009-REV.00
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