PJ04N03D Datasheet, PDF (2/5 Pages) Pan Jit International Inc. – 25V N-Channel Enhancement Mode Field Effect Transistor

PJ04N03D
ELECTRICAL CHARACTERISTICS (T_A=25oC,Unless Otherwise Noted)
PA RA ME TE R
S TATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
D rai n-Source On-state
Resi stance
Gate-Body Leakage
Zero Gate Voltage Drain
C urre nt
On-State D rai n C urrent
F o rwa rd Tra ns c o nd uc ta nc e
D YNA M IC
To t a l G a t e C h a r g e
S YM B OL
TE S T C OND ITIONS
V (BR)DSS
V GS(TH)
RDS(ON)
I GSS
I DSS
I D(ON)
gfs
V GS=0 V,I D=2 50µA
V DS=V GS,I D=250µA
V GS=10V,I D=3 0A
V GS=5V,I D=24A
V DS=0V,V GS=+20V
V DS=20V,VGS=0V
V DS=20V,V GS=0V,TJ=125^oC
V DS=10V,V GS=10V
VDS=5V,I D=24A
VDS=15V,VGS=5V,I D=30A
QG
Gate-Source C harge
Gate-Drain Charge
QGS
QGD
V DS=1 5 V ,V GS=1 0 V
I D=30A
Tur n- On D e la y Ti me
td(on)
Ri s e Ti me
Tur n- Off D e la y Ti me
tr
td(off)
V DS=15 V,I D=1A ,V GS=10V
RGS= 3 .6 Ω
F a ll Ti m e
tf
Inp ut C a p a c i ta nc e
Output C apaci tance
Re ve rs e Tra ns fe r C a p a c i t a nc e
C IS S
C OSS
C RSS
V GS=0 V,V DS=15V
f=1MHz
Gate Resistance
Source-Drain Diode
Rg
V GS=15mV,V DS=0V,f=1MHz
C onti nuous C urrent
IS
Forward Voltage
V SD
I F=30A ,V GS=0V
NOTE : Plus Test: Pluse Width < 300us, Duty Cycle < 2%.
M IN .
25
1
-
-
-
-
-
65
15
-
-
-
-
-
-
-
-
-
-
-
-
-
-
T YP.
MAX.
-
-
-
3
3.6
4.0
4.8
6.0
-
+100
-
1
-
25
-
-
-
-
26.4
-
58.2
-
5.4
-
11 .6
-
17.6
22
11 .8
18
48.6
72
19.2
26
2950
-
520
-
430
-
1.2
-
-
80
-
1.3
UNIT
V
V
mΩ
mΩ
nA
µA
µA
A
S
nC
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
Ω
A
V
Switching
VDD
Test Circuit
VIN
RL
Gate Charge
VDD
Test Circuit
VGS
RL
VOUT
RG
1mA
RG
December 10,2009-REV.00
PAGE . 2