PJ04N03D Datasheet, PDF (1/5 Pages) Pan Jit International Inc. – 25V N-Channel Enhancement Mode Field Effect Transistor

PJ04N03D
25V N-Channel Enhancement Mode Field Effect Transistor
FEATURES
• RDS(ON),VGS@10V,I DS@30A=4mΩ
• RDS(ON),VGS@5.0V,I DS@24A=6mΩ
TO-252
• Advanced trench process technology
• High Density Cell Design For Uitra Low On-Resistance
• Specially Designed for DC/DC Converters and Motor Drivers
• Fully Characterized Avalanche Voltage and Current
• In compliance with EU RoHS 2002/95/EC directives
D
G
S
MECHANICAL DATA
• Case : TO-252 Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : 04N03D
D
G
S
Maximum RATINGS and Thermal Characteristics (T_A=25^OC unless otherwise noted )
PARAMETER
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continous Drain Current
TC=25^oC
Pulsed Drain Current ⁽¹⁾
Avalanche Energy
L=0.1mH,I D=53A,VDD=25V
Power Dissipation
TC=25^oC
TC=75^oC
Operating Junction and Stroage Temperature Range
Junction-to-Case
Junction-to-Ambient
NOTE : Pulse width limited by maximum junction temperature
VDS
VGS
ID
I DM
EAS
PD
TJ,TSTG
RΘJC
RΘJA
25
+20
80
220
140
100
66
-55 to +175
1.5
50
Units
V
V
A
A
mJ
W
o_C
o_C/W
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
December 10,2009-REV.00
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