MN1380 Datasheet, PDF (5/20 Pages) Panasonic Semiconductor – CMOS LSIs for Voltage Detection

Microcomputer Peripheral LSIs
MN1380 Series
Absolute Maximum Ratings V_SS=0V, Ta=25˚C
Parameter
Symbol
Power supply voltage
V_DD
Output voltage
V_O
Operating ambient temperature
Ta
Storage temperature
T_stg
Rating
7.0
– 0.3 to V_DD +0.3
–20 to +70
–55 to +125
Recommended Operating Conditions V_SS=0V, Ta=25˚C
Parameter Symbol
Conditions
min
typ
max
Power supply ^VDD ^{See Figures 1 and 4.}
1.5
6.0
voltage
Unit
V
V
˚C
˚C
Unit
V
Electrical Characteristics
1) DC Characteristics V_SS=0V, Ta=–20˚C to +70˚C
Parameter
Symbol
Conditions
Power supply current
I_DD V_DD = 5 V ^*1
Load resistance = 10 kW
Detection voltage for drop
in power supply voltage ^*2
V_{DL Ta=25˚C}
Detection voltage hysteresis
See Figures 1 and 4.
width ^*2
∆VD
"H" level output voltage
"L" level output voltage
V_OH CMOS output I_OH=– 40µA
Inverted
V_DD=1.8V
CMOS output I_OH=– 0.5mA
V_OL N-channel open V_DD=1.8V
drain output I_OL=0.7mA
Inverted
V_DD=6.0V
CMOS output I_OH=0.3mA
Notes
*1: This includes the output pin's leakage current.
*2: For particulars, see the detection voltage rank table.
min typ
1
*2
*2
0.8V_DD
0.8
V_SS
V_SS
max Unit
5
µA
*2
V
*2
mV
V_DD
V_DD
V
–1.5
0.4
V
0.6
5