UN1111 Datasheet, PDF (4/14 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer transistor

UNR111x Series
Characteristics charts of UNR1111
−160
−120
−80
−40
I_C  V_CE
IB = −1.0 mA ^{Ta = 25°C}
− 0.9 mA
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
− 0.4 mA
− 0.3 mA
− 0.2 mA
− 0.1 mA
0
0 −2 −4 −6 −8 −10 −12
Collector-emitter voltage V_CE (V)
V_CE(sat)  I_C
−100
IC / IB = 10
−10
−1
25°C
− 0.1
−25°C
Ta = 75°C
− 0.01
− 0.1
−1
−10
−100
Collector current I_C (mA)
h_FE  I_C
160
VCE = −10 V
Ta = 75°C
25°C
120
−25°C
80
40
0
−1
−10
−100
−1 000
Collector current IC (mA)
C_ob  V_CB
6
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
− 0.1
−1
−10
−100
Collector-base voltage V_CB (V)
I_O  V_IN
V_IN  I_O
−10⁴
VO = −5 V
Ta = 25°C
−100
VO = − 0.2 V
Ta = 25°C
−10³
−10
−10²
−1
−10
− 0.1
−1
− 0.4 − 0.6 − 0.8 −1.0 −1.2 −1.4
Input voltage V_IN (V)
− 0.01
− 0.1
−1
−10
−100
Output current I_O (mA)
Characteristics charts of UNR1112
−160
−120
I_C  V_CE
IB = −1.0 mA ^{Ta = 25°C}
− 0.9 mA
− 0.8 mA
− 0.7 mA
− 0.6 mA
−100
−10
V_CE(sat)  I_C
I_C / I_B = 10
− 0.5 mA
−80
− 0.4 mA
−1
− 0.3 mA
25°C
T_a = 75°C
−40
− 0.2 mA
− 0.1
− 0.1 mA
−25°C
0
0 −2 −4 −6 −8 −10 −12
Collector-emitter voltage V_CE (V)
− 0.01
− 0.1
−1
−10
−100
Collector current I_C (mA)
h_FE  I_C
400
VCE = −10 V
300
Ta = 75°C
200
25°C
−25°C
100
0
−1
−10
−100
−1 000
Collector current I_C (mA)
4
SJH00001BED