UN1111 Datasheet, PDF (2/14 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer transistor

UNR111x Series
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base UNR1111
cutoff current UNR1112/1114/111D/111E
V_CBO
V_CEO
I_CBO
I_CEO
I_EBO
I_C = −10 µA, I_E = 0
I_C = −2 mA, I_B = 0
V_CB = −50 V, I_E = 0
V_CE = −50 V, I_B = 0
V_EB = −6 V, I_C = 0
(Collector open) UNR1113
UNR1110/1115/1116/1117
UNR111F/111H
UNR1119
UNR1118/111L
Forward current UNR1111
transfer ratio UNR1112/111E
h_FE V_CE = −10 V, I_C = −5 mA
Min Typ Max Unit
−50
V
−50
V
− 0.1 µA
− 0.5 µA
− 0.5 mA
− 0.2
− 0.1
− 0.01
−1.0
−1.5
−2.0
35

60
UNR1113/1114
UNR1110 ^*/1115 ^*/1116 ^*/
1117 ^*
80
160
460
UNR1118/111L
20
UNR1119/111D/111F/111H
30
Collector-emitter saturation voltage
V_CE(sat) I_C = −10 mA, I_B = − 0.3 mA
− 0.25 V
Output voltage high-level
V_OH V_CC = −5 V, V_B = − 0.5 V, R_L = 1 kΩ −4.9
V
Output voltage low-level
V_OL V_CC = −5 V, V_B = −2.5 V, R_L = 1 kΩ
− 0.2 V
UNR1113
V_CC = −5 V, V_B = −3.5 V, R_L = 1 kΩ
UNR111D
V_CC = −5 V, V_B = −10 V, R_L = 1 kΩ
UNR111E
V_CC = −5 V, V_B = −6 V, R_L = 1 kΩ
Transition frequency
f_T
V_CB = −10 V, I_E = 2 mA, f = 200 MHz
80
MHz
Input resistance UNR1111/1114/1115
R₁
−30% 10 +30% kΩ
UNR1112/1117
22
UNR1110/1113/111D/111E
47
UNR1116/111F/111L
4.7
UNR1118
0.51
UNR1119
1
UNR111H
Resistance ratio UNR1111/1112/1113/111L R₁/R₂
UNR1114
2.2
0.8 1.0 1.2

0.17 0.21 0.25
UNR1118/1119
0.08 0.1 0.12
UNR111D
4.7
UNR111E
2.14
UNR111F
0.47
UNR111H
0.17 0.22 0.27
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: Rank classification (UNR1110/1115/1116/1117)
Rank
Q
R
S
h_FE
160 to 260 210 to 340 290 to 460
2
SJH00001BED