UN1111 Datasheet, PDF (1/14 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer transistor

Transistors with built-in Resistor
UNR111x Series (UN111x Series)
Silicon PNP epitaxial planar transistor
For digital circuits
■ Features
• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
• M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
■ Resistance by Part Number
• UNR1110 (UN1110)
• UNR1111 (UN1111)
• UNR1112 (UN1112)
• UNR1113 (UN1113)
• UNR1114 (UN1114)
• UNR1115 (UN1115)
• UNR1116 (UN1116)
• UNR1117 (UN1117)
• UNR1118 (UN1118)
• UNR1119 (UN1119)
• UNR111D (UN111D)
• UNR111E (UN111E)
• UNR111F (UN111F)
• UNR111H (UN111H)
• UNR111L (UN111L)
(R₁)
47 kΩ
10 kΩ
22 kΩ
47 kΩ
10 kΩ
10 kΩ
4.7 kΩ
22 kΩ
0.51 kΩ
1 kΩ
47 kΩ
47 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
(R₂)

10 kΩ
22 kΩ
47 kΩ
47 kΩ



5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
10 kΩ
4.7 kΩ
6.9±0.1
(1.5)
(1.5)
R 0.7
R 0.9
(0.85)
0.55±0.1
3
2
1
(2.5) (2.5)
Internal Connection
R₁
B
R₂
Unit: mm
2.5±0.1
(1.0)
0.45±0.05
1: Base
2: Collector
3: Emitter
M-A1 Package
C
E
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−50
V
Collector-emitter voltage (Base open) V_CEO
−50
V
Collector current
I_C
−100
mA
Total power dissipation
P_T
400
mW
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
Publication date: October 2003
Note) The part numbers in the parenthesis show conventional part number.
SJH00001BED
1