XP8081 Datasheet, PDF (3/4 Pages) Panasonic Semiconductor – Silicon N-channel junction FET (Tr1) Silicon NPN epitaxial planer transistor (Tr2)

Composite Transistors
Common characteristics chart
P_T — Ta
250
2.5
200
2.0
150
1.5
100
1.0
50
0.5
I_D — V_DS
Ta=25˚C
VGS=0V
– 0.1V
– 0.2V
– 0.3V
– 0.4V
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
0
0123456
Drain to source voltage VDS (V)
| Y_fs | — V_GS
5
VDS=10V
Ta=25˚C
4
3
IDSS=10mA
2
1
| Y_fs | — I_D
2.5
VDS=10V
Ta=25˚C
2.0
IDSS=10mA
1.5
1.0
0.5
0
–1.6
–1.2
– 0.8
– 0.4
0
Gate to source voltage VGS (V)
0
0
2
4
6
8
Drain current ID (mA)
Characteristics charts of Tr2
I_C — V_CE
160
Ta=25˚C
140
IB=1.0mA _0.9mA
0.8mA
0.7mA
120
0.6mA
100
0.5mA
0.4mA
80
0.3mA
60
0.2mA
40
20
0.1mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
V_CE(sat) — I_C
100
IC/IB=10
30
10
3
1
0.3
25˚C
Ta=75˚C
0.1
0.03
– 25˚C
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
XP8081
I_D — V_GS
2.5
2.0
Ta=–25˚C
1.5
25˚C
1.0
75˚C
0.5
0
–1.2 –1.0 –0.8 –0.6 –0.4 –0.2 0
Gate to source voltage VGS (V)
C_iss, C_rss, C_oss — V_DS
10
VGS=0
f=1MHz
Ta=25˚C
8
6
Ciss
4
2
Coss
Crss
0
1
10
100
Drain to source voltage VDS (V)
h_FE — I_C
400
VCE=10V
350
300
Ta=75˚C
250
25˚C
– 25˚C
200
150
100
50
0
1 3 10 30 100 300 1000
Collector current IC (mA)
3