XP8081 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon N-channel junction FET (Tr1) Silicon NPN epitaxial planer transistor (Tr2)

Composite Transistors
XP8081
Silicon N-channel junction FET (Tr1)
Silicon NPN epitaxial planer transistor (Tr2)
For analog switching (Tr1)/switching (Tr2)
s ^Features
q Two elements incorporated into one package.
q Reduction of the mounting area and assembly cost by one half.
2.1±0.1
0.425 1.25±0.1 0.425
1
6
2
5
3
4
Unit: mm
s ^{Basic Part Number of Element}
q 2SK1103+UN1213 (transistors with built-in resistor)
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Gate to drain voltage V_GDS
–50
V
Tr1 Drain current
I_D
20
mA
Gate current
I_G
10
mA
Collector to base voltage V_CBO
50
V
Tr2 Collector to emitter voltage V_CEO
50
V
Collector current
I_C
100
mA
Total power dissipation
P_T
150
mW
Overall Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
0.2±0.1
1 : Drain (Tr1) 4 : Emitter (Tr2)
2 : Source (Tr1) 5 : Base (Tr2)
3 : Collector (Tr2) 6 : Gate (Tr1)
EIAJ : SC–88
S–Mini Type Package (6–pin)
Marking Symbol: 9Z
Internal Connection
Tr1
1
6
2
5
3
4
Tr2
1