XP8081 Datasheet, PDF (2/4 Pages) Panasonic Semiconductor – Silicon N-channel junction FET (Tr1) Silicon NPN epitaxial planer transistor (Tr2)

Composite Transistors
s ^{Electrical Characteristics (Ta=25˚C)}
q Tr1
Parameter
Symbol
Gate to drain voltage
Drain current
Gate cutoff current
Gate to source cutoff voltage
Mutual conductance
V_GDS
I_DSS
I_GSS
V_GSC
gm
Drain resistance
Common source short-circuit input capacitance
Common source reverse transfer capacitance
Common source short-circuit output capacitance
R_DS(on)
C_iss
C_rss
C_oss
Conditions
I_G = –10µA, V_DS = 0
V_DS = 10V, V_GS = 0
V_GS = –30V, V_DS = 0
V_DS = 10V, I_D = 10µA
V_DS = 10V, I_D = 1mA, f = 1kHz
V_DS = 10mV, V_GS = 0
V_DS = 10V, V_GS = 0, f = 1MHz
V_DS = 10V, V_GS = 0, f = 1MHz
V_DS = 10V, V_GS = 0, f = 1MHz
XP8081
min
typ max Unit
–50
V
0.2
2.2
mA
–10
nA
–1.0
V
1.8
2.5
mS
400
Ω
7
pF
1.5
pF
1.5
pF
q Tr2
Parameter
Symbol
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Transition frequency
Input resistance
Resistance ratio
V_CBO
V_CEO
I_CBO
I_CEO
I_EBO
h_FE
V_CE(sat)
V_OH
V_OL
f_T
R₁
R₁/R₂
Conditions
I_C = 10µA, I_E = 0
I_C = 2mA, I_B = 0
V_CB = 50V, I_E = 0
V_CE = 50V, I_B = 0
V_EB = 6V, I_C = 0
V_CE = 10V, I_C = 5mA
I_C = 10mA, I_B = 0.3mA
V_CC = 5V, V_B = 0.5V, R_L = 1kΩ
V_CC = 5V, V_B = 3.5V, R_L = 1kΩ
V_CB = 10V, I_E = –1mA, f = 200MHz
min
50
50
80
4.9
–30%
0.8
typ max Unit
V
V
0.1
µA
0.5
µA
0.1
mA
0.25
V
V
0.2
V
150
MHz
47 +30% kΩ
1.0
1.2
2