XP0C301 Datasheet, PDF (3/5 Pages) Panasonic Semiconductor – For General Amplification

XP0C301
Characteristics charts of Tr1
I_C  V_CE
−120
Ta = 25°C
−100
−80
IB = −300 µA
−250 µA
−200 µA
−60
−150 µA
−40
−100 µA
−20
−50 µA
0
0 −2 −4 −6 −8 −10 −12
Collector-emitter voltage V_CE (V)
I_C  I_B
−160
VCE = −10 V
−140 ^{Ta = 25°C}
−120
−100
−80
−60
−40
−20
0
0 − 0.2 − 0.4 − 0.6 − 0.8 −1.0 −1.2
Base current I_B (mA)
I_B  V_BE
−4.0
VCE = −10 V
−3.5
Ta = 25°C
−3.0
−2.5
−2.0
−1.5
−1.0
− 0.5
0
0
− 0.2 − 0.4 − 0.6 − 0.8
Base-emitter voltage V_BE (V)
I_C  V_BE
−120
VCE = −10 V
−100
25°C
−80
Ta = 75°C
−25°C
−60
−40
−20
0
0 − 0.2 − 0.4 − 0.6 − 0.8 −1.0
Base-emitter voltage V_BE (V)
−10
−1
−10^−1
−10^−2
V_CE(sat)  I_C
IC / IB = 10
Ta = 75°C
25°C
−25°C
−10^−3
−1
−10
−10²
−10³
Collector current I_C (mA)
h_FE  I_C
600
VCE = −10 V
500
Ta = 75°C
400
25°C
300
−25°C
200
100
−^010−1
−1
−10
−10²
−10³
Collector current I_C (mA)
C_ob  V_CB
10
f = 1 MHz
Ta = 25°C
1
0
−10
−20
−30
−40
Collector-base voltage V_CB (V)
SJJ00222CED
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