English
Language : 

XP0C301 Datasheet, PDF (1/5 Pages) Panasonic Semiconductor – For General Amplification
Composite Transistors
XP0C301 (XP1C301)
Silicon PNP epitaxial planar type (Tr1)
Silicon NPN epitaxial planar type (Tr2)
For general amplification
■ Features
• Two elements incorporated into one package
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• 2SB0709A (2SB709A) + 2SD0601A (2SD601A)
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Tr1
Collector-base voltage
VCBO
−60
V
(Emitter open)
Collector-emitter voltage VCEO
−50
V
(Base open)
Emitter-base voltage
VEBO
−7
V
(Collector open)
Collector current
IC
−100
mA
Peak collector current
ICP
−200
mA
Tr2
Collector-base voltage
VCBO
60
V
(Emitter open)
Collector-emitter voltage VCEO
50
V
(Base open)
Emitter-base voltage
VEBO
7
V
(Collector open)
Overall
Collector current
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
IC
100
mA
ICP
200
mA
PT
150
mW
Tj
150
°C
Tstg −55 to +150 °C
0.20±0.05
5
4
Unit: mm
0.12+–00..0025
1
2
3
0.65 0.65
1.3±0.1
2.0±0.1
10˚
1: Emitter (Tr1)
2: Base (Tr1)
Emitter (Tr2)
EIAJ: SC-88A
3: Base (Tr2)
4: Collector (Tr2)
5: Collector (Tr1)
SMini5-G1 Package
Marking Symbol: 4R
Internal Connection
5
4
Tr1
Tr2
123
Publication date: December 2003
Note) The part number in the parenthesis shows conventional part number.
SJJ00222CED
1