XP0C301 Datasheet, PDF (2/5 Pages) Panasonic Semiconductor – For General Amplification

XP0C301
■ Electrical Characteristics T_a = 25°C ± 3°C
• Tr1
Parameter
Symbol
Conditions
Min
Collector-base voltage (Emitter open) V_CBO I_C = −10 µA, I_E = 0
−60
Collector-emitter voltage (Base open) V_CEO I_C = −2 mA, I_B = 0
−50
Emitter-base voltage (Collector open) V_EBO I_E = −10 µA, I_C = 0
−7
Collector-base cutoff current (Emitter open) I_CBO V_CB = −20 V, I_E = 0
Collector-emitter cutoff current (Base open) I_CEO V_CE = −10 V, I_B = 0
Forward current transfer ratio
h_FE V_CE = −10 V, I_C = −2 mA
160
Collector-emitter saturation voltage
V_CE(sat) I_C = −100 mA, I_B = −10 mA
Transition frequency
f_T
V_CB = −10 V, I_E = 1 mA, f = 200 MHz
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = −10 V, I_E = 0, f = 1 MHz
Typ Max
− 0.3
80
2.7
− 0.1
−100
460
− 0.5
Unit
V
V
V
µA
µA

V
MHz
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
• Tr2
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) V_CBO I_C = 10 µA, I_E = 0
60
V
Collector-emitter voltage (Base open) V_CEO I_C = 2 mA, I_B = 0
50
V
Emitter-base voltage (Collector open) V_EBO I_E = 10 µA, I_C = 0
7
V
Collector-base cutoff current (Emitter open) I_CBO V_CB = 20 V, I_E = 0
0.1 µA
Collector-emitter cutoff current (Base open) I_CEO V_CE = 10 V, I_B = 0
100 µA
Forward current transfer ratio
h_FE V_CE = 10 V, I_C = 2 mA
160
460

Collector-emitter saturation voltage
V_CE(sat) I_C = 100 mA, I_B = 10 mA
0.1 0.3
V
Transition frequency
f_T
V_CB = 10 V, I_E = −2 mA, f = 200 MHz
150
MHz
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = 10 V, I_E = 0, f = 1 MHz
3.5
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
P_T  T_a
250
200
150
100
50
0
0
40
80
120
160
Ambient temperature T_a (°C)
2
SJJ00222CED