DB2232000L Datasheet, PDF (3/6 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Doc No. TT4-EA-12656
Revision. 3
Product Standards
Schottky Barrier Diode
DB2232000L
Technical Data ( reference )
1.E+01
1.E+00
IF - VF
Ta = 125 °C
1.E-01 ^{85 °C}
1.E-02
1.E-03
25 °C
1.E-04
-40 °C
1.E-05
0.0
0.1
0.2
0.3
0.4
0.5
Forward voltage VF (V)
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
1.E-06
1.E-07
1.E-08
0
IR - VR
Ta = 125 °C
85 °C
25 °C
-40 °C
10
20
30
Reverse voltage VR (V)
350
300
250
200
150
100
50
0
0
Ct - VR
Ta = 25 °C
f = 1 MHz
5
10
15
20
25
30
Reverse voltage VR (V)
1000
Rth - t
(2)
(1)
(3)
100
Rth(j-l) = 30 °C/W
10
1
0.001 0.01
(1) Non-heat sink
(2) Mounted on glass epoxy print board.
(3) Mounted on alumina print board.
Board size : 50 mm × 50 mm x 0.8 mm
Solder in : 2 mm x 2 mm
0.1
1
10
Time t (s)
100 1000
2
tp/T
1.75
DC
1.5
1.25 _1/2
1
IF(AV) - Tl
IF
tp
T
VR = 15 V
Tj = 125 °C
0.75
1/4
0.5
Sine Wave
0.25
0
0 25 50 75 100 125 150 175
Lead temperature Tl (°C)
1
IF
tp
0.8
T
0.6
0.4
PF(AV) - IF(AV)
Sine Wave
DC
1/2
1/4
0.2
0
0
0.5
1
1.5
2
Forward current (Average) IF(AV) (A)
Page 3 of 4
Established : 2010-07-22
Revised : 2013-04-19