DB2232000L Datasheet, PDF (1/6 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Doc No. TT4-EA-12656
Revision. 3
DB2232000L
Silicon epitaxial planar type
For rectification
 Features
 Low forward voltage VF
 Small reverse leakage current
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
 Marking Symbol: B5
 Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
 Absolute Maximum Ratings Ta = 25 C
Parameter
Symbol Rating
Unit
Reverse voltage
VR
30
V
Repetitive peak reverse voltage
VRRM
30
V
Peak forward current
IF(AV)
1.5
A
Non-repetitive peak forward surge current ^*1 IFSM
30
A
Junction temperature
Tj
125
°C
Operating ambient temperature
Topr -40 to +85
°C
Storage temperature
Tstg -55 to +125 °C
Note: *1 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Product Standards
Schottky Barrier Diode
DB2232000L
1.6
2
Unit: mm
0.13
1
0.55
0.8
1. Cathode
2. Anode
Panasonic
JEITA
Code
Mini2-F4-B
SC-109D
SOD-123
Internal Connection
2
1
Established : 2010-07-22
Revised : 2013-04-19
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