DB2232000L Datasheet, PDF (2/6 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Doc No. TT4-EA-12656
Revision. 3
Product Standards
Schottky Barrier Diode
DB2232000L
 Electrical Characteristics Ta = 25 C  3 C
Parameter
Symbol
Conditions
Min Typ Max Unit
VF1 IF = 0.5 A
0.38
V
Forward voltage
VF2 IF = 1.0 A
0.42
V
VF3 IF = 1.5 A
0.46
V
Reverse current
IR VR = 30 V
100 μA
Terminal capacitance
Ct VR = 10 V, f = 1 MHz
48
pF
Reverse recovery time ^*1
trr
IF = IR = 100 mA
Irr = 0.1×IR, RL = 100 
16
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on
the charge of a human body and the leakage of current from the operating equipment.
3. *1 trr test circuit
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
Wave Form Analyzer
(SAS-8130)
R_i = 50 Ω
Input Pulse
t_r
t_p
t
10%
V_R
90%
t_p = 2 μs
t_r = 0.35 ns
δ = 0.05
Output Pulse
I_F
t_rr
t
I_rr = 0.1 × I_R
I_F = 100 mA
I_R = 100 mA
R_L = 100 Ω
Established : 2010-07-22
Revised : 2013-04-19
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