2SC829 Datasheet, PDF (3/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high-frequency amplification)

Transistor
C_ob — V_CB
1.6
I_E=–1mA
f=1MHz
1.4
Ta=25˚C
1.2
1.0
0.8
0.6
0.4
0.2
0
1
3
10
30
100
Collector to base voltage V_CB (V)
b_ie — g_ie
12
y_ie=g_ie+jb_ie
V_CE=10V
100
10
8
58
6
25
4
10.7
I_E=– 0.4mA
–1mA
2
–2mA
–4mA
–7mA
f=0.45MHz
0
0
4
8
12 16 20
Input conductance g_ie (mS)
b_fe — g_fe
0
–0.4mA
0.45
0.45
10.7
–20
–40
25
100 ⁵⁸
100
58
100
100
58
–1mA
10.7
–2mA
25
–4mA
f=10.7MHz
25
–60
58
I_E=–7mA
–80
–100
–120
0
y_fe=g_fe+jb_fe
V_CE=10V
20 40 60 80 100
Forward transfer conductance g_fe (mS)
b_oe — g_oe
1.2
100
1.0
–7mA
–4mA
0.8
–2mA
58 ^–1mA
0.6
– 0.4mA
25
I_E=– 0.1mA
0.4
10.7
0.2
f=0.45MHz
0
0
0.2 0.4
y_oe=g_oe+jb_oe
V_CE=10V
0.6 0.8 1.0
Output conductance g_oe (mS)
2SC829
0
– 0.5
b_re — g_re
y_re=g_re+jb_re
V_CE=10V
f=0.45MHz
10.7
25
–1.0
58
– 0.4mA
–1mA
–1.5
–2mA
–4mA
–2.0
–2.5
100
I_E=–7mA
–3.0
– 0.5 – 0.4 – 0.3 – 0.2 – 0.1 0
Reverse transfer conductance g_re (mS)
3