2SC829 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high-frequency amplification)

Transistor
2SC829
Silicon NPN epitaxial planer type
For high-frequency amplification
s ^Features
q Optimum for RF amplification, oscillation, mixing, and IF stage
of FM/AM radios.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
30
V
Collector to emitter voltage V_CEO
20
V
Emitter to base voltage
V_EBO
5
V
Collector current
I_C
30
mA
Collector power dissipation P_C
400
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
5.0±0.2
Unit: mm
4.0±0.2
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector to base voltage
V_CBO
I_C = 10µA, I_E = 0
30
V
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
V_CEO
V_EBO
h_FE*
I_C = 2mA, I_B = 0
I_E = 10µA, I_C = 0
V_CE = 10V, I_C = 1mA
20
V
5
V
70
250
Transition frequency
f_T
V_CB = 10V, I_C = 1mA, f = 200MHz
150
230
MHz
Common emitter reverse transfer capacitance C_re
Reverse transfer impedance
Z_rb
V_CE = 10V, I_C = 1mA, f = 10.7MHz
V_CB = 10V, I_E = –1mA, f = 2MHz
1.3
1.6
pF
60
Ω
*_{hFE Rank classification}
Rank
B
h_FE
70 ~ 160
C
110 ~ 250
1