2SC829 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high-frequency amplification)

Transistor
P_C — Ta
500
450
400
350
300
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
I_B — V_BE
120
V_CE=10V
Ta=25˚C
100
80
60
40
20
0
0
0.6
1.2
1.8
Base to emitter voltage V_BE (V)
f_T — I_E
600
Ta=25˚C
500
400
300
V_CB=10V
6V
200
100
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Emitter current I_E (mA)
I_C — V_CE
12
Ta=25˚C
I_B=100µA
10
80µA
8
60µA
6
40µA
4
2
20µA
0
0
6
12
18
Collector to emitter voltage V_CE (V)
V_CE(sat) — I_C
100
I_B/I_B=10
30
10
3
1
0.3
Ta=75˚C
25˚C
0.1
–25˚C
0.03
0.01
0.1 0.3 1 3 10 30 100
Collector current I_C (mA)
Z_rb — I_E
80
f=2MHz
Ta=25˚C
70
60
50
40
30
V_CB=6V
20
10V
10
0
– 0.1 – 0.3
–1
–3
–10
Emitter current I_E (mA)
2SC829
I_C — V_BE
60
V_CE=10V
50
40
25˚C
30
Ta=75˚C –25˚C
20
10
0
0
0.4 0.8 1.2 1.6 2.0
Base to emitter voltage V_BE (V)
h_FE — I_C
300
V_CE=10V
250
Ta=75˚C
200
25˚C
150
–25˚C
100
50
0
0.1 0.3 1 3 10 30 100
Collector current I_C (mA)
C_re — V_CE
2.4
I_C=1mA
f=10.7MHz
Ta=25˚C
2.0
1.6
1.2
0.8
0.4
0
0.1 0.3 1 3 10 30 100
Collector to emitter voltage V_CE (V)
2