2SC4152 Datasheet, PDF (3/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

Power Transistors
Area of safe operation, reverse bias ASO
1.6
L_coil=200µH
1.4
I_C/I_B=10
(I_B1=–I_B2)
T_C=25˚C
1.2
1.0
I_CP
0.8
0.6
0.4
I_C
0.2
<1mA
0
0 200 400 600 800 1000 1200 1400 1600
Collector to emitter voltage V_CE (V)
Reverse bias ASO measuring circuit
T.U.T
I_B1
I_C
V_in
–I_B2
t_W
10000
1000
R_th(t) — t
Note: R_th was measured at Ta=25˚C and under natural convection.
(1) P_T=10V × 0.2A (2W) and without heat sink
(2) P_T=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
100
(1)
(2)
10
1
0.1
10^–4
10^–3
10^–2
10^–1
1
10
10²
10³
10⁴
Time t (s)
2SC4152
L coil
V_CC
Vclamp
3