2SC4152 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

Power Transistors
2SC4152
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s ^Features
q High-speed switching
q High collector to base voltage V_CBO
q Wide area of safe operation (ASO)
q Satisfactory linearity of foward current transfer ratio h_FE
q Full-pack package which can be installed to the heat sink with
one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
1400
V
V_CER
1400
V
Collector to emitter voltage
V_CEO
700
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
1.0
A
Collector current
I_C
0.3
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
20
W
2
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
I_CBO
I_EBO
V_CER
V_CEO
V_CB = 1100V, I_E = 0
V_EB = 4V, I_C = 0
I_C = 1mA, R_BE = 100Ω
I_C = 1mA, I_B = 0
1400
700
10
µA
10
µA
V
V
Emitter to base voltage
V_EBO
I_E = 1mA, I_C = 0
5
V
Forward current transfer ratio
h_FE
V_CE = 5V, I_C = 30mA
10
40
Collector to emitter saturation voltage V_CE(sat)
I_C = 60mA, I_B = 6mA
2
V
Base to emitter saturation voltage V_BE(sat)
I_C = 60mA, I_B = 6mA
2
V
Transition frequency
f_T
V_CE = 10V, I_C = 30mA, f = 1MHz
12
MHz
Collector output capacitance
C_ob
Turn-on time
t_on
Storage time
t_stg
Fall time
t_f
V_CB = 100V, I_E = 0, f = 1MHz
I_C = 0.15A, I_B1 = 15mA, I_B2 = –30mA,
V_CC = 250V
6
pF
2
µs
3
µs
1
µs
1