2SC4152 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

Power Transistors
40
30
(1)
20
P_C — Ta
(1) T_C=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(P_C=2W)
(2)
10
(3)
(4)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
V_BE(sat) — I_C
100
I_C/I_B=10
30
10
3
1
T_C=–25˚C
100˚C
0.3
25˚C
0.1
0.001 0.003 0.01 0.03 0.1 0.3 1
Collector current I_C (A)
1000
300
100
C_ob — V_CB
I_E=0
f=1MHz
T_C=25˚C
30
10
3
1
1
3
10
30
100
Collector to base voltage V_CB (V)
I_C — V_CE
120
T_C=25˚C
100
I_B=5mA
4mA
80
3mA
2mA
60
40
1mA
20
0
0 2 4 6 8 10 12
Collector to emitter voltage V_CE (V)
2SC4152
V_CE(sat) — I_C
100
I_C/I_B=10
30
10
3
1
0.3
0.1
0.03
T_C=100˚C
25˚C
–25˚C
0.01
0.001 0.003 0.01 0.03 0.1 0.3 1
Collector current I_C (A)
1000
300
h_FE — I_C
V_CE=5V
100
25˚C
T_C=100˚C
30
–25˚C
10
3
1
0.001 0.003 0.01 0.03 0.1 0.3 1
Collector current I_C (A)
1000
300
100
f_T — I_C
V_CE=10V
f=1MHz
T_C=25˚C
30
10
3
1
0.001 0.003 0.01 0.03 0.1 0.3 1
Collector current I_C (A)
t_on, t_stg, t_f — I_C
100
Pulsed t_w=1ms
Duty cycle=1%
30
I_C/I_B=5
(2I_B1=–I_B2)
10
V_CC=250V
T_C=25˚C
3
t_stg
t_on
1
0.3
t_f
0.1
0.03
0.01
0
0.2
0.4
0.6
0.8
Collector current I_C (A)
Area of safe operation (ASO)
10
Non repetitive pulse
T_C=25˚C
3
1
t=1ms
0.3
10ms
0.1
DC
0.03
0.01
0.003
0.001
1 3 10 30 100 300 1000
Collector to emitter voltage V_CE (V)
2