UNR511N Datasheet, PDF (2/17 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

UNR511x Series
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base UNR5110/5115/5116/5117
cutoff current UNR5113
V_CBO
V_CEO
I_CBO
I_CEO
I_EBO
I_C = −10 µA, I_E = 0
I_C = −2 mA, I_B = 0
V_CB = −50 V, I_E = 0
V_CE = −50 V, I_B = 0
V_EB = −6 V, I_C = 0
(Collector open) UNR5112/5114/511D/
511E/511M/511N/511T
UNR511Z
UNR5111
UNR511F/511H
UNR5119
UNR5118/511L/511V
Forward current UNR511V
transfer ratio UNR5118/511L
h_FE V_CE = −10 V, I_C = −5 mA
UNR5119/511D/511F/511H
UNR5111
UNR5112/511E
UNR511Z
UNR5113/5114/511M
UNR511N/511T
UNR5110 ^*/5115 ^*/5116 ^*/5117 ^*
Collector-emitter saturation voltage
UNR511V
Output voltage high-level
Output voltage low-level
UNR5113
UNR511D
UNR511E
Transition frequency
UNR5116
Input
UNR5118
resistance UNR5119
V_CE(sat)
V_OH
V_OL
f_T
R₁
I_C = −10 mA, I_B = − 0.3 mA
I_C = −10 mA, I_B = −1.5 mA
V_CC = −5 V, V_B = − 0.5 V, R_L = 1 kΩ
V_CC = −5 V, V_B = −2.5 V, R_L = 1 kΩ
V_CC = −5 V, V_B = −3.5 V, R_L = 1 kΩ
V_CC = −5 V, V_B = −10 V, R_L = 1 kΩ
V_CC = −5 V, V_B = −6 V, R_L = 1 kΩ
V_CB = −10 V, I_E = 1 mA, f = 200 MHz
V_CB = −10 V, I_E = 2 mA, f = 200 MHz
UNR511H/511M/511V
UNR5116/511F/511L
511N/511Z
UNR5111/5114/5115
UNR5112/5117/511T
UNR5110/5113/511D/511E
Resistance
ratio
UNR511M
UNR511N
R₁/R₂
UNR5118/5119
UNR511Z
Min Typ Max Unit
−50
V
−50
V
− 0.1 µA
− 0.5 µA
− 0.01 mA
− 0.1
− 0.2
− 0.4
− 0.5
−1.0
−1.5
−2.0
6
20

20
30
35
60
60
200
80
80
400
160
460
− 0.25 V
−4.9
V
− 0.2 V
80
150
−30% 0.51 +30%
1.0
2.2
4.7
MHz
kΩ
10
22
47
0.047

0.1
0.08 0.10 0.12
0.21
2
SJH00022BED