UNR511N Datasheet, PDF (15/17 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

UNR511x Series
Characteristics charts of UNR511T
I_C  V_CE
−200
−10
Ta = 25°C
V_CE(sat)  I_C
IC / IB = 10
−150
IB = −1.0 mA
−100
−50
– 0.9 mA
– 0.8 mA
– 0.7 mA
– 0.6 mA
– 0.5 mA
− 0.4 mA
− 0.3 mA
− 0.2 mA
− 0.1 mA
0
0 −2 −4 −6 −8 −10 −12
Collector-emitter voltage V_CE (V)
−1
− 0.1
Ta = 75°C
25°C
−25°C
− 0.01
−1
−10
−100
−1 000
Collector current I_C (mA)
h_FE  I_C
300
V_CE = −10 V
250
T_a = 75°C
200
25°C
150
−25°C
100
50
0
−1
−10
−100
−1 000
Collector current I_C (mA)
I_O  V_IN
V_IN  I_O
−10⁴
VO = −5 V
−100
VO = − 0.2 V
Ta = 25°C
Ta = 25°C
−10³
−10
−10²
−1
−10
− 0.1
−1
− 0.4 − 0.6 − 0.8 −1 −1.2 −1.4
Input voltage V_IN (V)
− 0.01
− 0.1
−1
−10
−100
Output current IO (mA)
Characteristics charts of UNR511V
I_C  V_CE
−12
Ta = 25°C
−10
IB = −1.0 mA
− 0.9 mA
−8
− 0.8 mA
− 0.7 mA
−6
− 0.6 mA
− 0.5 mA
−4
− 0.4 mA
− 0.3 mA
−2
− 0.2 mA
− 0.1 mA
0
0 −2 −4 −6 −8 −10 −12
Collector-emitter voltage V_CE (V)
V_CE(sat)  I_C
−10
I_C / I_B = 10
−1
− 0.1
T_a = 75°C
25°C
−25°C
− 0.01
−1
−10
−100
−1 000
Collector current I_C (mA)
SJH00022BED
h_FE  I_C
12
V_CE = −10 V
T_a = 75°C
10
25°C
8
6
−25°C
4
2
0
−1
−10
−100
−1 000
Collector current I_C (mA)
15