UNR511N Datasheet, PDF (1/17 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

Transistors with built-in Resistor
UNR511x Series (UN511x Series)
Silicon PNP epitaxial planar type
For digital circuits
■ Features
• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
• S-Mini type package, allowing automatic insertion through the tape/
magazine packing
■ Resistance by Part Number
Marking symbol (R₁)
• UNR5110 (UN5110)
6L
47 kΩ
• UNR5111 (UN5111)
6A
10 kΩ
• UNR5112 (UN5112)
6B
22 kΩ
• UNR5113 (UN5113)
6C
47 kΩ
• UNR5114 (UN5114)
6D
10 kΩ
• UNR5115 (UN5115)
6E
10 kΩ
• UNR5116 (UN5116)
6F
4.7 kΩ
• UNR5117 (UN5117)
6H
22 kΩ
• UNR5118 (UN5118)
6I
0.51 kΩ
• UNR5119 (UN5119)
6K
1 kΩ
• UNR511D (UN511D)
6M
47 kΩ
• UNR511E (UN511E)
6N
47 kΩ
• UNR511F (UN511F)
6O
4.7 kΩ
• UNR511H (UN511H)
6P
2.2 kΩ
• UNR511L (UN511L)
6Q
4.7 kΩ
• UNR511M (UN511M)
EI
2.2 kΩ
• UNR511N (UN511N)
EW
4.7 kΩ
• UNR511T (UN511T)
EY
22 kΩ
• UNR511V (UN511V)
FC
2.2 kΩ
• UNR511Z (UN511Z)
FE
4.7 kΩ
(R₂)

10 kΩ
22 kΩ
47 kΩ
47 kΩ



5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
10 kΩ
4.7 kΩ
47 kΩ
47 kΩ
47 kΩ
2.2 kΩ
22 kΩ
0.3^{+–00..01}
3
Unit: mm
0.15^{+–00..0150}
1
2
(0.65) (0.65)
1.3±0.1
2.0±0.2
10˚
Internal Connection
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
R₁
C
B
R₂
E
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−50
V
Collector-emitter voltage (Base open) V_CEO
−50
V
Collector current
I_C
−100
mA
Total power dissipation
Junction temperature
Storage temperature
P_T
150
mW
T_j
150
°C
T_stg −55 to +150 °C
Publication date: December 2003
Note) The part numbers in the parenthesis show conventional part number.
SJH00022BED
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