UN2111 Datasheet, PDF (16/17 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer transistor

UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
–10000
I_O — V_IN
VO= – 5V
Ta=25˚C
–100
V_IN — I_O
VO= – 0.2V
Ta=25˚C
–1000
–10
–100
–1
–10
– 0.1
–1
–0.4 –0.6 –0.8 –1 –1.2 –1.4
Input voltage VIN (V)
– 0.01
– 0.1
–1
–10
–100
Output current IO (mA)
Characteristics charts of UN211V
I_C — V_CE
–12
Ta=25˚C
IB= –1.0mA
–10
–0.9mA
–8
–0.8mA
–0.7mA
–6
–0.6mA
–0.5mA
–4
–0.4mA
–0.3mA
–2
–0.2mA
–0.1mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
V_CE(sat) — I_C
–10
IC/IB=10
–1
– 0.1
Ta=75˚C
25˚C
– 25˚C
– 0.01
–1
–10
–100
–1000
Collector current IC (mA)
–10000
–1000
I_O — V_IN
VO= – 5V
Ta=25˚C
–100
–10
V_IN — I_O
VO= – 0.2V
Ta=25˚C
h_FE — I_C
12
VCE= –10V
Ta=75˚C
10
25˚C
8
– 25˚C
6
4
2
0
–1
–10
–100
Collector current IC (mA)
–100
–1
–10
– 0.1
–1
–0.4 –0.6 –0.8 –1 –1.2 –1.4
Input voltage VIN (V)
– 0.01
– 0.1
–1
–10
–100
Output current IO (mA)
16