UN2111 Datasheet, PDF (1/17 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer transistor

Transistors with built-in Resistor
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Silicon PNP epitaxial planer transistor
For digital circuits
s ^Features
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
Unit: mm
0.65±0.15
1
3
2
s ^{Resistance by Part Number}
Marking Symbol (R₁)
q UN2111
6A
10kΩ
q UN2112
6B
22kΩ
q UN2113
6C
47kΩ
q UN2114
6D
10kΩ
q UN2115
6E
10kΩ
q UN2116
6F
4.7kΩ
q UN2117
6H
22kΩ
q UN2118
6I
0.51kΩ
q UN2119
6K
1kΩ
q UN2110
6L
47kΩ
q UN211D
6M
47kΩ
q UN211E
6N
47kΩ
q UN211F
6O
4.7kΩ
q UN211H
6P
2.2kΩ
q UN211L
6Q
4.7kΩ
q UN211M
EI
2.2kΩ
q UN211N
EW
4.7kΩ
q UN211T
EY
22kΩ
q UN211V
FC
2.2kΩ
q UN211Z
FE
4.7kΩ
(R₂)
10kΩ
22kΩ
47kΩ
47kΩ
—
—
—
5.1kΩ
10kΩ
—
10kΩ
22kΩ
10kΩ
10kΩ
4.7kΩ
47kΩ
47kΩ
47kΩ
2.2kΩ
22kΩ
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
EIAJ:SC-59
Mini Type Package
Internal Connection
R1
C
B
R2
E
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–50
V
Collector to emitter voltage V_CEO
–50
V
Collector current
I_C
–100
mA
Total power dissipation
P_T
200
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
1