UN2111 Datasheet, PDF (13/17 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer transistor

UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Characteristics charts of UN211H
–120
–100
I_C — V_CE
Ta=25˚C
– 80
IB= – 0.5mA
– 0.4mA
– 60
– 0.3mA
– 40
– 0.2mA
– 20
– 0.1mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–100
–10
V_CE(sat) — I_C
IC/IB=10
–1
– 0.1
Ta=75˚C
25˚C
– 25˚C
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
h_FE — I_C
240
VCE= –10V
200
160
Ta=75˚C
120
25˚C
80
– 25˚C
40
0
–0.1 –0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
C_ob — V_CB
6
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
–1
–3
–10
– 30
–100
Collector to base voltage VCB (V)
–100
–10
V_IN — I_O
VO= – 0.2V
Ta=25˚C
–1
– 0.1
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Output current IO (mA)
Characteristics charts of UN211L
– 240
– 200
I_C — V_CE
Ta=25˚C
–160
–120
– 80
IB= –1.0mA
– 0.8mA
– 0.6mA
– 0.4mA
– 40
– 0.2mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–100
– 30
–10
V_CE(sat) — I_C
IC/IB=10
–3
–1
– 0.3
– 0.1
Ta=75˚C
25˚C
– 25˚C
– 0.03
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
h_FE — I_C
240
VCE= –10V
200
160
120
Ta=75˚C
80
25˚C
– 25˚C
40
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
13