NCN4555 Datasheet, PDF (9/12 Pages) ON Semiconductor – 1.8V / 3V SIM Card Power Supply and Level Shifter

NCN4555
The typical waveform provided in Figure 10 shows how
the accelerator operates. During the first 200 ns (typical),
the slope of the rise time is solely a function of the pullup
resistor associated with the stray capacitance. During this
period, the PMOS devices are not activated since the input
voltage is below their V_gs threshold. When the input slope
crosses the V_gsth, the opposite one shot is activated,
providing a low impedance to charge the capacitance, thus
increasing the rise time as depicted in Figure 10. The same
mechanism applies for the opposite side of the line to make
sure the system is optimum.
INPUT SCHMITT TRIGGERS
All the Logic input pins (excepted I/O and SIM_I/O, See
Figure 3) have built−in Schmitt trigger circuits to prevent
the NCN4555 against uncontrolled operation. The typical
dynamic characteristics of the related pins are depicted
Figure 11.
The output signal is guaranteed to go High when the input
voltage is above 0.7 x V_DD, and will go Low when the input
voltage is below 0.2 x V_DD or 0.4 V depending on the input
considered (see the Digital Input Table on page 5).
SHUTDOWN OPERATING
In order to save power or for other purpose required by the
application it is possible to put the NCN4555 in a shutdown
mode by setting Low the pin STOP. On the other hand the
device enters automatically in a shutdown mode when V_DD
becomes lower than 1.1 V typically.
ESD PROTECTION
The NCN4555 SIM interface features an HBM ESD
voltage protection in excess of 7 kV for all the SIM pins
(SIM_IO, SIM_CLK, SIM_RST, SIM_V_CC and GND). All
the other pins (microcontroller side) sustain at least 2 kV.
These values are guaranteed for the device in its full integrity
without considering the external capacitors added to the
circuit for a proper operating. Consequently in the operating
conditions it is able to sustain much more than 7 kV on its
SIM pins making it perfectly protected against electrostatic
discharge well over the HBM ESD voltages required by the
ISO7816 standard (4 kV).
PRINTED CIRCUIT BOARD LAYOUT
Careful layout routing will be applied to achieve a good
and efficient operating of the device in its mobile or portable
environment and fully exploit its performance.
The bypass capacitors have to be connected as close as
possible to the device pins (SIM_V_CC, V_DD or V_BAT) in
order to reduce as much as possible parasitic behaviors
(ripple and noise). It is recommended to use
ceramic capacitors.
The exposed pad of the QFN−16 package will be
connected to the ground as well as the unconnected pins
(NC). A relatively large ground plane is recommended.
Figures 12 and 13 shows an example of PCB device
implementation in an evaluation environment.
OUTPUT
V_DD
ON
Figure 10. SIM_IO Typical Rise and Fall Times with
Stray Capacitance > 30 pF
(33 pF Capacitor Connected on the Board)
OFF
INPUT
0.2 x V_DD
or 0.4 V
0.7 x V_DD
Figure 11. Typical Schmitt Trigger Characteristics
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