NCN4555 Datasheet, PDF (4/12 Pages) ON Semiconductor – 1.8V / 3V SIM Card Power Supply and Level Shifter

NCN4555
ATTRIBUTES
Characteristics
Values
ESD protection
HBM, SIM card pins (7, 8, 9, 10 & 11) (Note 1)
HBM, All other pins (Note 1)
MM, SIM card pins (7, 8, 9, 10 & 11) (Note 2)
MM, All other pins (Note 2)
CDM, SIM card pins (7, 8, 9, 10 & 11) (Note 3)
CDM , All other pins (Note 3)
> 7 kV
> 2 kV
> 600 V
> 200 V
> 2 kV
> 600 V
Moisture sensitivity (Note 4) QFN−16
Level 1
Flammability Rating
Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. Human Body Model, R =1500 W, C = 100 pF.
2. Machine Model.
3. CDM, Charged Device Model.
4. For additional information, see Application Note AND8003/D.
MAXIMUM RATINGS (Note 5)
Rating
Symbol
Value
Unit
LDO Power Supply Voltage
V_BAT
−0.5 ≤ V_BAT ≤ 6
V
Power Supply from Microcontroller Side
V_DD
−0.5 ≤ V_DD ≤ 6
V
External Card Power Supply
SIM_V_CC
−0.5 ≤ SIM_V_CC ≤ 6
V
Digital Input Pins
V_in
−0.5 ≤ V_in ≤V_DD + 0.5
but < 6.0
V
I_in
±5
mA
Digital Output Pins
V_out
−0.5 ≤ V_out ≤ V_DD + 0.5
but < 6.0
V
I_out
±10
mA
SIM card Output Pins
V_out
−0.5 ≤ V_out ≤ SIM_V_CC + 0.5
but < 6.0
V
I_out
15 (internally limited)
mA
QFN−16 Low Profile package
Power Dissipation @ T_A = + 85°C
Thermal Resistance Junction−to−Air
P_D
R_qJA
440
mW
90
°C/W
Operating Ambient Temperature Range
T_A
−25 to +85
°C
Operating Junction Temperature Range
T_J
−25 to +125
°C
Maximum Junction Temperature
T_Jmax
+125
°C
Storage Temperature Range
T_stg
−65 to + 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
5. Maximum electrical ratings are defined as those values beyond which damage to the device may occur at T_A = +25°C
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