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MJD18002D2 Datasheet, PDF (8/11 Pages) ON Semiconductor – POWER TRANSISTOR 2 AMPERES 1000 VOLTS, 50 WATTS Bipolar NPN Transistor
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MJD18002D2
Typical Switching Characteristics
10
9
IC
8
tsi
7
tfi
90% IC
6
5 Vclamp
4
3 IB
10% Vclamp
90% IB1
10% IC
tc
2
1
0
01
23
4
5
6
7
8
TIME
Figure 25. Inductive Switching Measurements
Table 1. Inductive Load Switching Drive Circuit
+15 V
1 mF
150 W
3W
100 W
3W
MTP8P10
100 mF
VCE PEAK
IC PEAK
+10 V
MPF930
MPF930
50
W
COMMON
500 mF
−Voff
MTP8P10
MUR105
RB1
Iout
A
MJE210
RB2
150 W
3W
MTP12N10
1 mF
VCE
IB1
IB
V(BR)CEO(sus)
L = 10 mH
RB2 = ∞
VCC = 20 Volts
IC(pk) = 100 mA
IB2
Inductive Switching
L = 200 mH
RB2 = 0
VCC = 15 Volts
RB1 selected for
desired IB1
RBSOA
L = 500 mH
RB2 = 0
VCC = 15 Volts
RB1 selected for
desired IB1
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