MJD18002D2 Datasheet, PDF(2/11 Page) ON Semiconductor – POWER TRANSISTOR 2 AMPERES 1000 VOLTS, 50 WATTS Bipolar NPN Transistor

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

MJD18002D2 Datasheet, PDF (2/11 Pages) ON Semiconductor – POWER TRANSISTOR 2 AMPERES 1000 VOLTS, 50 WATTS Bipolar NPN Transistor

◁

MJD18002D2

ELECTRICAL CHARACTERISTICS (TC = 25Â°C unless otherwise noted)

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Characteristic

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ OFF CHARACTERISTICS

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâEmitter Sustaining Voltage (IC = 100 mA, L = 25 mH)

CollectorâBase Breakdown Voltage (ICBO = 1 mA)

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ EmitterâBase Breakdown Voltage (IEBO = 1 mA)

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Collector Cutoff Current (VCE = Rated VCEO, IB = 0)

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Collector Cutoff Current (VCE = Rated VCES, VEB = 0)

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (VCE = 500 V, VEB = 0)

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ EmitterâCutoff Current (VEB = 10 Vdc, IC = 0)

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ ON CHARACTERISTICS

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ BaseâEmitter Saturation Voltage

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (IC = 0.4 Adc, IB = 40 mAdc)

(IC = 1.0 Adc, IB = 0.2 Adc)

@ TC = 25Â°C

@ TC = 125Â°C

@ TC = 25Â°C

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâEmitter Saturation Voltage

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (IC = 0.4 Adc, IB = 40 mAdc)

@ TC = 25Â°C

@ TC = 125Â°C

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (IC = 1.0 Adc, IB = 0.2 Adc)

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ DC Current Gain

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (IC = 0.4 Adc, VCE = 1.0 Vdc)

@ TC = 25Â°C

@ TC = 125Â°C

@ TC = 25Â°C

@ TC = 125Â°C

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (IC = 1.0 Adc, VCE = 1.0 Vdc)

@ TC = 25Â°C

@ TC = 125Â°C

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ DYNAMIC CHARACTERISTICS

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz)

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Input Capacitance (VEB = 8 Vdc)

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ DIODE CHARACTERISTICS

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Forward Diode Voltage

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (IEC = 1.0 Adc)

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (IEC = 0.4 Adc)

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Forward Recovery Time

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (IF = 0.4 Adc, di/dt = 10 A/ms)

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (IF = 1.0 Adc, di/dt = 10 A/ms)

@ TC = 25Â°C

@ TC = 125Â°C

@ TC = 25Â°C

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ DYNAMIC SATURATION VOLTAGE

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Dynamic Saturation Voltage

Determinated 1 ms and 3 ms

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ respectively after rising IB1 reaches

ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ 90% of final IB1

IC = 0.4 Adc

IB1 = 40 mA

VCC = 300 Vdc

IC = 1 Adc

IB1 = 0.2 A

VCC = 300 Vdc

@ 1 ms

@ 3 ms

@ 1 ms

@ 3 ms

@ TC = 25Â°C

Symbol

VCEO(sus)

VCBO

VEBO

ICEO

ICES

IEBO

VBE(sat)

VCE(sat)

hFE

Cob

Cib

VEC

tfr

VCE(dsat)

Min

450

1000

8.0

6.0

4.0

Typ

570

1100

0.78

0.87

0.36

0.50

0.40

0.65

6.0

340

1.2

1.0

0.6

517

480

7.4

2.5

11.7

1.3

Max

100

500

100

500

1.0

1.1

0.6

1.0

0.75

1.2

100

500

1.5

1.3

Unit

Vdc

mAdc

Vdc

MHz

Vdc

http://onsemi.com

▷