MJD18002D2 Datasheet, PDF (1/11 Pages) ON Semiconductor – POWER TRANSISTOR 2 AMPERES 1000 VOLTS, 50 WATTS Bipolar NPN Transistor

MJD18002D2
Bipolar NPN Transistor
High Speed, High Gain Bipolar NPN
Power Transistor with Integrated
Collector−Emitter Diode and Built−In
Efficient Antisaturation Network
The MJD18002D2 is a state−of−the−art high speed, high gain
bipolar transistor (H2BIP). Tight dynamic characteristics and lot to lot
minimum spread (±150 ns on storage time) make it ideally suitable for
light ballast applications. Therefore, there is no longer a need to
guarantee an h_FE window.
Features
• Low Base Drive Requirement
• High Peak DC Current Gain (55 Typical) @ I_C = 100 mA
• Extremely Low Storage Time Min/Max Guarantees Due to the
H2BIP Structure which Minimizes the Spread
• Integrated Collector−Emitter Free Wheeling Diode
• Fully Characterized and Guaranteed Dynamic V_CEsat
• Characteristics Make It Suitable for PFC Application
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
• Six Sigma® Process Providing Tight and Reproductible Parameter
Spreads
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak (Note 1)
Symbol Value
Unit
V_CEO
450
Vdc
V_CBO
1000
Vdc
V_CES
1000
Vdc
V_EBO
11
Vdc
I_C
2.0
Adc
I_CM
5.0
Base Current
Base Current
− Continuous
− Peak (Note 1)
THERMAL CHARACTERISTICS
I_B
1.0
Adc
I_BM
2.0
Characteristic
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Symbol
P_D
Value
50
0.4
Unit
W
W/°C
Operating and Storage Temperature Range T_J, T_stg −65 to +150 °C
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 seconds
R_qJC
R_qJA
T_L
5.0
°C/W
71.4
°C/W
260
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle = 10%.
© Semiconductor Components Industries, LLC, 2006
1
January, 2006 − Rev. 2
http://onsemi.com
POWER TRANSISTOR
2 AMPERES
1000 VOLTS, 50 WATTS
4
12
3
DPAK
CASE 369C
STYLE 1
MARKING DIAGRAM
YWW
180
02D2G
Y
= Year
WW
= Work Week
18002D2 = Device Code
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping^†
MJD18002D2T4
DPAK 3000/Tape & Reel
MJD18002D2T4G DPAK 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MJD18002D2/D