IRFR1018EPBF Datasheet, PDF (8/15 Pages) International Rectifier – HEXFET TM Power MOSFET

NCP5383
ELECTRICAL CHARACTERISTICS
(Unless otherwise stated: 0°C < T_A < 70°C; 0°C < T_J < 125°C; 4.5 V < V_CC < 13.2 V; F_sw = 400 KHz)
Parameter
Test Conditions
Min
Typ
Current Limit
Current Sense Amp to ILIM Gain
ILIM Pin Input Bias Current
ILIM Pin Working Voltage Range
20ĂmVĂ<Ă(CsxĂ-ĂCSxN)Ă<Ă60ĂmV
T_A = 25°C
V_ilim = 2.0 V
5.7
6.0
0.1
0.3
ILIM Input Offset Voltage
-50
Undervoltage Protection
UVLO Start Threshold
UVLO Stop Threshold
V_CC = 12 V
8.2
9.0
7.2
8.0
UVLO Hysteresis
1.0
UVLO
Hysteresis
V_CCP = 5 V
3.7
4.0
0.5
Power Good
Output Saturation Voltage
Rise Time
Output Voltage at Power-up
High – Output Leakage Current
I_PG = 10 mA, V_CC = 12 Vdc
External pull-up of 1 KW to 1.25ĂV,
C_TOT = 45ĂpF,
DV_O = 10% to 90%
External PG pull-up resistor of 2 KW to 5 V
t_{R_VCC} ≤ 3 x t_{R_5V},
100 ms ≤ t_{R_VCC} ≤ 20 ms
PG = 5.5 V via 1 K
Upper Threshold Voltage
125
Lower Threshold Voltage
75
Rising Delay
Falling Delay
V_CORE increasing
V_CORE decreasing
0.3
1.40
5
Max
Units
6.3
V/V
1.0
mA
2.0
V
50
mV
9.5
V
8.5
V
4.3
V
V
0.4
V
150
ns
1.0
V
0.1
mA
% of V_FB
% of V_FB
2
ms
ms
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