IRFR1018EPBF Datasheet, PDF (7/15 Pages) International Rectifier – HEXFET TM Power MOSFET

NCP5383
ELECTRICAL CHARACTERISTICS
(Unless otherwise stated: 0°C < T_A < 70°C; 0°C < T_J < 125°C; 4.5 V < V_CC < 13.2 V; F_sw = 400 KHz)
Parameter
Test Conditions
Min
Typ
Oscillator
Switching Frequency Range
100
Switching Frequency Accuracy
ROSC = 100 KW
90
100
Switching Frequency Accuracy
ROSC = 49.9 KW
180
200
Switching Frequency Accuracy
ROSC = 24.9 KW
360
400
ROSC Output Voltage
1.92
2.00
Modulators (PWM Comparators)
Minimum Pulse Width (Note 1)
Fs = 400 KHz
30
Propagation Delay
20
Magnitude of the PWM Ramp
1.0
0% Duty Cycle
COMP voltage when the PWM outputs
1.3
remain LO
100% Duty Cycle
COMP voltage when the PWM outputs
2.3
remain HI
PWM Comparator Offset Mismatch
Phase Angle Error
-15
PWM Linear Duty Cycle
90
Gate Drivers
Upper Gate Source
Vbst - Vswn = 5 V,
1.8
VTG – VSWN = 4 V
Upper Gate Sink
Vbst - Vswn = 5 V,
1.8
VTG – VSWN = 1 V
Lower Gate Source
V_CCP = 5 V, Vgs = 4 V
1.8
Lower Gate Sink
V_CCP = 5 V, Vgs = 1 V
0.9
Upper gate transition times
C_load = 3 nF
16
C_load = 3 nF
16
Lower gate transition times
C_load = 3 nF
16
C_load = 3 nF
7.0
SWN falling to BG rising delay
C_load = 3 nF
18
BG falling to TG rising delay
C_load = 3 nF
40
Soft-Start
Soft-Start Pin Source Current
5.0
Soft-Start Pin Discharge Voltage
Fault = 1
Soft-Start Pin Discharge Time
From EN = 0 to V_SS pin < max discharge
5.0
voltage, C_SS = 0.01ĂmF
Enable Input
Enable High Input Leakage Current
EN = 3.0 V
Upper Threshold
Total Hysteresis
Thermal Shutdown
V_UPPER
V_UPPER – V_LOWER
0.80
0.85
50
100
Thermal Trip Point
TSD
1. Guaranteed by design, not tested in production.
Max
400
110
220
440
2.08
40
40
15
50
10
0.90
150
160
Units
KHz
KHz
KHz
KHz
V
ns
ns
V
V
V
Mv
deg
%
W
W
W
W
ns
ns
ns
ns
ns
ns
mA
mV
ms
mA
V
mV
C
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