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CM1235 Datasheet, PDF (8/14 Pages) ON Semiconductor – Small Footprint PicoGuard XS® ESD Clamp Array For High Speed Data Line Protection | |||
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CM1235
ELECTRICAL OPERATING CHARACTERISTICS (SEE NOTE 1)
SYMBOL PARAMETER
VIN
I/O Voltage Relative to GND
IIN
Continuous Current through signal pins (IN
to OUT) 1000 Hr
CONDITIONS
IF
Channel Leakage Current
TA = 25°C; VIN = 5V
VESD
ESD Protection - Peak Discharge Voltage at
any channel input, in system:
Contact discharge per IEC 61000-4-2
Standard
TA = 25°C
IRES
Residual ESD Peak Current on RDUP (Re- IEC 61000-4-2 8kV;
sistance of Device Under Protection)
RDUP = 5⦠TA = 25°C;
See Figure 6.
VCL
Channel Clamp Voltage
IPP = 1A, TA = 25°C,
(Channel clamp voltage per IEC 61000-4-5 tP = 8/20µS
Standard)
Positive Transients
Negative Transients
RDYN
Dynamic Resistance
Positive Transients
Negative Transients
IPP = 1A, TA = 25ºC
tP = 8/20µS
ZTDR
Differential Impedance
TDR excursion from 100â¦
characteristic impedance trans-
mission line;
TR = 200ps; Note 2
Zo
Differential Channels pair characteristic TR = 200ps;
impedance
Note 2
MIN TYP MAX UNITS
-0.5
5.5
V
100
mA
±0.1 ±1.0 µA
±8
kV
3.0
A
+9.2
V
-1.6
V
0.6
â¦
0.5
â¦
87
103
â¦
100
â¦
âZo Channel-to-Channel Impedance Match (Dif- TR = 200ps; TA = 25ºC;
ferential)
Note 2
2
%
Note 1: All parameters specified at TA = â40°C to +85°C unless otherwise noted.
Note 2: Impedance values for deviation from continuous 100⦠uncompensated differential microstrip, with typical layout as
measured. See Figure 7.
Rev. 3 | Page 8 of 14 | www.onsemi.com
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