 English |
|
|
|
|
|
|
|
| BUD42D_11 Datasheet, PDF (8/12 Pages) ON Semiconductor – High Speed, High Gain Bipolar NPN Transistor | |||
| |||
| ◁ |
BUD42D
TYPICAL SWITCHING CHARACTERISTICS
Table 1. Inductive Load Switching Drive Circuit
+15 V
1 mF
150 W
3W
100 W
3W
MTP8P10
100 mF
VCE PEAK
IC PEAK
+10 V
MPF930
MPF930
50
W
COMMON
500 mF
-Voff
MTP8P10
MUR105
RB1
Iout
A
MJE210
RB2
150 W
3W
MTP12N10
1 mF
VCE
IB1
IB
V(BR)CEO(sus)
L = 10 mH
RB2 = â
VCC = 20 Volts
IC(pk) = 100 mA
IB2
Inductive Switching
L = 200 mH
RB2 = 0
VCC = 15 Volts
RB1 selected for
âdesired IB1
RBSOA
L = 500 mH
RB2 = 0
VCC = 15 Volts
RB1 selected for
âdesired IB1
0.1 VF
VFRM
tfr
VFR (1.1 VF) UNLESS
OTHERWISE SPECIFIED
10% IF
Figure 27. tfr Measurement
http://onsemi.com
8
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese