BUD42D_11 Datasheet, PDF (2/12 Pages) ON Semiconductor – High Speed, High Gain Bipolar NPN Transistor

BUD42D
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction−to−Case
R_qJC
5.0
°C/W
Thermal Resistance, Junction−to−Ambient
R_qJA
71.4
°C/W
Maximum Lead Temperature for Soldering Purposes: 1/8 in from Case for 5 seconds
T_L
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
Symbol
Min
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{OFF CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector−Emitter Sustaining Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(IC = 100 mA, L = 25 mH)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector−Base Breakdown Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{(ICBO = 1 mA)}
Emitter−Base Breakdown Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(IEBO = 1 mA)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Cutoff Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(VCE = Rated VCEO, IB = 0)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Cutoff Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^(VCE ^{= Rated V}CES^{, V}EB ^{= 0)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Emitter−Cutoff Current}
(V_EB = 9 Vdc, I_C = 0)
V_CEO(sus)
350
V_CBO
650
V_EBO
9.0
@ T_C = 25°C
I_CEO
−
@ T_C = 125°C
−
@ T_C = 25°C
I_CES
−
@ T_C = 125°C
−
I_EBO
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{ON CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base−Emitter Saturation Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(IC = 1 Adc, IB = 0.2 Adc)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Saturation Voltage
(I_C = 2 Adc, I_B = 0.5 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{DC Current Gain}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(IC = 1 Adc, VCE = 2 Vdc)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^(IC ^{= 2 Adc, V}CE ^{= 5 Vdc)}
DIODE CHARACTERISTICS
V_BE(sat)
−
V_CE(sat)
−
h_FE
8.0
10
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Forward Diode Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(IEC = 1.0 Adc)}
V_EC
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{SWITCHING CHARACTERISTICS: Resistive Load (D.C.≤ 10%, Pulse Width = 40 ms)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Turn−Off Time}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (I_C = 1.2 Adc, I_B1 = 0.4 A, I_B2 = 0.1 A, V_CC = 300 V)
T_off
4.6
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Fall Time
(I_C = 2.5 Adc, I_B1 = I_B2 = 0.5 A, V_CC = 150 V, V_BE = −2 V)
T_f
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{DYNAMIC SATURATION VOLTAGE}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Dynamic Saturation
Voltage:
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Determined 1 ms and}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{3 ms respectively after}
rising I_B1 reaches
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{90% of final IB1}
@ 1 ms @ T_C = 25°C
V_CE(dsat)
−
I_C = 400 mA
@ T_C = 125°C
−
I_B1 = 40 mA
V_CC = 300 V
@ 3 ms
@ T_C = 25°C
@ T_C = 125°C
−
−
@ 1 ms @ T_C = 25°C
−
I_C = 1 A
@ T_C = 125°C
−
I_B1 = 200 mA
V_CC = 300 V
@ 3 ms
@ T_C = 25°C
@ T_C = 125°C
−
−
260
Typ
430
780
12
−
−
−
−
−
0.85
0.2
13
12
0.9
−
−
2.8
3.2
0.75
1.3
2.1
4.7
0.35
0.6
°C
Max Unit
Vdc
−
Vdc
−
Vdc
−
100 mAdc
200
10
mAdc
200
mAdc
100
1.2
Vdc
1.0
Vdc
−
−
−
V
1.5
ms
6.55
ms
0.8
−
V
−
−
−
−
−
−
−
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