BUD42D_11 Datasheet, PDF (5/12 Pages) ON Semiconductor – High Speed, High Gain Bipolar NPN Transistor

1000
100
10
1
1
BUD42D
TYPICAL SWITCHING CHARACTERISTICS
900
C_ib
T_J = 25°C
f_(test) = 1 MHz
800
700
I_CER = 10 mA
10
V_R, REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
C_ob
100
600
500
400
T_C = 25°C
300
10
I_CER = 100 mA
l_C = 25 mH
100
1000
R_BE (W)
Figure 12. B_VCER = f(R_BE)
10000
800
700
600
500
400
300
200
100
0
0
h_FE = 5
h_FE = 10
I_Bon = I_Boff
V_CC = 300 V
P_W = 40 ms
T_J = 125°C
T_J = 25°C
0.5
1
1.5
2
I_C, COLLECTOR CURRENT (AMPS)
Figure 13. Resistive Switching, t_on
9
I_Bon = I_Boff
V_CC = 300 V
P_W = 40 ms
6
h_FE = 5
3
T_J = 125°C
T_J = 25°C
h_FE = 10
0
0
0.5
1
1.5
2
I_C, COLLECTOR CURRENT (AMPS)
Figure 14. Resistive Switching, t_off
4
I_Bon = I_Boff
V_CE = 15 V
3 ^{VZ = 300 V}
L_C = 200 mH
2
1
4
T_J = 125°C
3
T_J = 25°C
2
T_J = 125°C
T_J = 25°C
I_Bon = I_Boff
V_CE = 15 V
V_Z = 300 V
L_C = 200 mH
0
0
0.5
1
1.5
2
I_C, COLLECTOR CURRENT (AMPS)
Figure 15. Inductive Storage Time,
t_si @ h_FE = 5
1
0.5
1
1.5
2
I_C, COLLECTOR CURRENT (AMPS)
Figure 16. Inductive Storage Time,
t_si @ h_FE = 10
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